DOI Prefix : 10.9780 | Journal DOI : 10.9780/22307850
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Volume : I, Issue : I, February - 2011

HIGH-ENERGY ELECTRON INDUCED GAIN DEGRADATION IN BIPOLAR JUNCTION TRANSISTORS

Godwin Jacob D' Souza

DOI : 10.9780/22307850, Published By : Laxmi Book Publication

Abstract :

This paper portrays the effect of 8 MeV electron bar on the forward current increase of room borne business native bipolar intersection semiconductors 2N2219A (npn), 2N3019 (npn) and 2N2905A (pnp). The gadgets are presented to 8 MeV electrons in the one-sided condition.

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Cite This Article :

Godwin Jacob D' Souza, (2011). HIGH-ENERGY ELECTRON INDUCED GAIN DEGRADATION IN BIPOLAR JUNCTION TRANSISTORS. Indian Streams Research Journal, Vol. I, Issue. I, DOI : 10.9780/22307850, http://oldisrj.lbp.world/UploadedData/6669.pdf

References :

  1. 1. R.N. Nowlin, E.W. Enlow, R.D. Schrimpf, W.E. Combs, IEEE Trans. Nucl. Sci. 39 (1992) 2026.
  2. 2. S.L. Kosier, A. Wei, R.D. Schrimpf, D.M. Fleetwood, M.D. DeLaus, R.L. Pease, W.E. Combs, IEEE Trans. Electron Dev. 42 (1995) 436.

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