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Volume : II, Issue : VII, August - 2012

RADIATION EFFECTS ON THE POWER MOSFET FOR SPACE APPLICATIONS

Godwin Jacob D' Souza

Published By : Laxmi Book Publication

Abstract :

The electrical characteristics of solid-state devices, such as bipolar junction transistors (BJTs), metal-oxide-semiconductor field-effect transistors (MOSFETs), and other active components, are influenced by photon radiation and temperature variations in the space environment.

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Cite This Article :

Godwin Jacob D' Souza, (2012). RADIATION EFFECTS ON THE POWER MOSFET FOR SPACE APPLICATIONS. Indian Streams Research Journal, Vol. II, Issue. VII, http://oldisrj.lbp.world/UploadedData/6668.pdf

References :

  1. 1. International Rectifier, 200 V N-Channel MOSFET, IRFP250 Datasheet, May 2001.

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