Volume : II, Issue : VII, August - 2012 RADIATION EFFECTS ON THE POWER MOSFET FOR SPACE APPLICATIONS![](ArticleImage/No_Image.jpg) Godwin Jacob D' Souza Published By : Laxmi Book Publication Abstract : The electrical characteristics of solid-state devices, such as bipolar junction transistors (BJTs), metal-oxide-semiconductor field-effect transistors (MOSFETs), and other active components, are influenced by photon radiation and temperature variations in the space environment. Keywords : Article : Cite This Article : Godwin Jacob D' Souza, (2012). RADIATION EFFECTS ON THE POWER MOSFET FOR SPACE APPLICATIONS. Indian Streams Research Journal, Vol. II, Issue. VII, http://oldisrj.lbp.world/UploadedData/6668.pdf References : - 1. International Rectifier, 200 V N-Channel MOSFET, IRFP250 Datasheet, May 2001.
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