DOI Prefix : 10.9780 | Journal DOI : 10.9780/22307850
Scroll to Top

Volume : I, Issue : III, April - 2011

Comparative Study Of Stacking Faults In Doped And Undoped Lead Iodide Crystals

D. S. Bhavsar

DOI : 10.9780/22307850, Published By : Laxmi Book Publication

Abstract :

The X-ray investigations of doped and undoped lead iodide crystals shows that the lattice parameters 'a' and 'c' and hence the unit cell volume are sensitively affected by the dopant concentration. Also the stacking faults in doped Lead Iodide crystals are less than the undoped Lead Iodide crystals and goes on decreasing as the concentration of the dopant increases.

Keywords :


Article :


Cite This Article :

D. S. Bhavsar, (2011). Comparative Study Of Stacking Faults In Doped And Undoped Lead Iodide Crystals. Indian Streams Research Journal, Vol. I, Issue. III, DOI : 10.9780/22307850, http://oldisrj.lbp.world/UploadedData/123.pdf

References :

  1. V.K. Agrawal, Physics Letters A34 (1971) 82

Article Post Production

Article Indexed In

Comments :
Enter Name :
Email ID :
Comments :

Previous Comments :
Creative Commons License
Indian Streams Research Journal by Laxmi Book Publication is licensed under a Creative Commons Attribution 4.0 International License.
Based on a work at http://oldisrj.lbp.world/Default.aspx.
Permissions beyond the scope of this license may be available at http://oldisrj.lbp.world/Default.aspx
Copyright © 2014 Indian Streams Research Journal. All rights reserved
Looking for information? Browse our FAQs, tour our sitemap, or contact ISRJ
Read our Privacy Policy Statement and Plagairism Policy. Use of this site signifies your agreement to the Terms of Use