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Volume : II, Issue : VII, August - 2012

Characterisation Of Low Noise Amplifier

MAULIK B.PATEL, ABHISEK CHOBEY and SUNIL B.PATEL

Published By : Laxmi Book Publication

Abstract :

Amplification is one of the most basic and prevalent microwave circuit functions in modern RF and microwave systems. Early microwave amplifiers relied on tubes, such as klystrons and traveling-wave tubes, or solid-state reflection amplifiers based on the negative resistance characteristics of tunnel or varactor diodes. But due to the dramatic improvements and innovations in solid-state technology that have occurred since the 1970s, most RF and microwave amplifiers today use transistor devices such as Si or SiGe BJTs, GaAs HBTs, GaAs or InP FETs, or GaAs HEMTs. Microwave transistor amplifiers are rugged, low-cost, reliable, and can be easily integrated in both hybrid and monolithic integrated circuitry. Transistor amplifiers can be used at frequencies in excess of 100 GHz in a wide range of applications requiring small size, low-noise figure, broad bandwidth, and low to medium power capacity. Although microwave tubes are still required for very high power and/or very high frequency applications, continuing improvement in the performance of microwave transistors is steadily reducing the need for microwave tubes

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Cite This Article :

MAULIK B.PATEL, ABHISEK CHOBEY and SUNIL B.PATEL, (2012). Characterisation Of Low Noise Amplifier. Indian Streams Research Journal, Vol. II, Issue. VII, http://oldisrj.lbp.world/UploadedData/1228.pdf

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