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Volume : II, Issue : XI, December - 2012 COAXIALDOUBLE GA TE SCHOTTKYBARRIER CARBON NANOTUBE FIELD EFFECT TRANSISTORS: THEORETICALOVERVIEW MANIBHUSHAN DOI : 10.9780/22307850, Published By : Laxmi Book Publication Abstract : Carbon nanotube ?eld-effect transistors (CNTFET s) have been studied in
recent years as a potential alternative to CMOS devices, because of the capability of
ballistic transport. The ambipolar behavior of Schottky barrier CNTFET s limits the
performance of these devices. A double gate design is proposed to suppress this behavior .
In this structure the ?rst gate located near the source contact controls carrier injection
and the second gate located near the drain contact suppresses parasitic carrier
injection. T o avoid the ambipolar behavior it is necessary that the voltage of the second
gate is higher or at least equal to the drain voltage. The behavior of these devices has
been studied by solving the coupled Schr¨odinger-Poisson equation system. W e
investigated the effect of the second gate voltage on the performance of the device and
?nally the advantages and disadvantages of these options are discussed. Keywords : Article : Cite This Article : MANIBHUSHAN, (2012). COAXIALDOUBLE GA TE SCHOTTKYBARRIER CARBON NANOTUBE FIELD EFFECT TRANSISTORS: THEORETICALOVERVIEW. Indian Streams Research Journal, Vol. II, Issue. XI, DOI : 10.9780/22307850, http://oldisrj.lbp.world/UploadedData/1800.pdf References : - A. Javey et al., Lett. to Nature 424, 654 (2003).
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- R. Martel et al., Phys. Rev. Lett. 87, 6805 (2001).
- J. Guo et al., IEEE Trans.ED 51, 172 (2004).
- D. John et al., in Proc. NSTJ Nanotech (2004)
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