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Volume : II, Issue : XI, December - 2012 EFFECT OF TEMPERATURE ON THE PERFORMANCE OF MODFET LOW NOISE AMPLIFIER V.J.K.KISHOR SONTI AND V.KANNAN DOI : 10.9780/22307850, Published By : Laxmi Book Publication Abstract : In this paper the temperature influence on the performance of the modulated
doped field effect transistor is analyzed. MODFET LNA design at 5.8GHz centre
frequency is analyzed, whose dielectric constant of the substrate is 2.2 and the maximum
gain value obtained is 16.203 dB with minimum noise figure value obtained as 0.24.
Noise resistance variation w.r.t temperature was also obtained. Different values of
performance parameters were obtained for different device temperatures, which clearly
justifies the effect of thermal noise on the performance of the design. Lines used in the
design along with the components are properly placed in the layout obtained. This work
has been carried out using ADS software and the results obtained are in greater
coherence with theoretical facts. Keywords : Article : Cite This Article : V.J.K.KISHOR SONTI AND V.KANNAN, (2012). EFFECT OF TEMPERATURE ON THE PERFORMANCE OF MODFET LOW NOISE AMPLIFIER. Indian Streams Research Journal, Vol. II, Issue. XI, DOI : 10.9780/22307850, http://oldisrj.lbp.world/UploadedData/1778.pdf References : - Hasina F. Huq, Syed K. Islam.(2005), “Self-Aligned AlGaN/GaN MODFET with Liquid Phase Deposited Oxide Gate for Microwave Power Applications”, IEEE, Department of Electrical and Computer Engineering, The University of Tennessee.
- B.VanZeghbroeck, Principles of semiconductor devices, 2011, ecee.colorado.edu/~bart/book/book/chapter3/pdf/ch3_6.pdf.
- Mark C. Lau, Virginia Polytechnic Institute and State University, Small Signal Equivalent Circuit Extraction From A Gallium Arsenide Mesfet Device, 1997.
- ZHANG Hualiang, The Design of Low Noise Amplifier Using ADS, December 22, 2004
- V.J.K.Kishor Sonti, V.Kannan,“ Comparative analysis of HEMT LNA performance based on microstrip based design methodology “ International Conference on Trends in Electrical, Electronics and Power Engineering (ICTEEP'2012), July 15 -16 , 2012.
- www.wikipedia.org
- L.Aucoin, HEMTs and PHEMTs, parts.jpl.nasa.gov/mmic/3-IV.pdf
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