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Volume : II, Issue : VIII, September - 2012 Structural And Optical Properties Of Thermally Evaporated Cds Thin Films Arwa A. AL hattami, Ebtesam A. Kadash, H. S. Patel, J.R.Rathod, K. D. Patel, V. M. Pathak and R. Srivastava DOI : 10.9780/22307850, Published By : Laxmi Book Publication Abstract : Cadmium Sulphide is an important semiconducting material belonging to
group II-VI. This compound has been investigated since many years in crystal and thin
film forms. In present investigations, Cadmium Sulphide is deposited in thin film form
using thermal evaporation at pressure better than 10-5 torr. The structural and optical
characterizations of CdS have been discussed in this paper for three different
thicknesses. From the structural characterization (Using XRD technique), it was
observed that CdS possesses cubic structure with grain size around 20 nm. The micro
strain (å) and dislocation density (ñ) were also estimated in present case and found to be
in the range 16.25x104 – 22.73 x104 lines-m2 and 19x10-5 – 33x10-5 lines/m2
respectively. The lattice parameter was found to be around 5.811? .From the optical
characterization, the bandgap of CdS was evaluated and found to vary from 2.46eV to
2.40eV with thickness in the range 6k? - 10k?. In addition to this, the transmission
properties were observed to become less effective as the thickness of films increases. The
extinction coefficient was found to decrease with increase in thickness of the films.. Keywords : Article : Cite This Article : Arwa A. AL hattami, Ebtesam A. Kadash, H. S. Patel, J.R.Rathod, K. D. Patel, V. M. Pathak and R. Srivastava, (2012). Structural And Optical Properties Of Thermally Evaporated Cds Thin Films. Indian Streams Research Journal, Vol. II, Issue. VIII, DOI : 10.9780/22307850, http://oldisrj.lbp.world/UploadedData/1351.pdf References : - K. Senthil, D. Mangalraj, S. K. Narayandass, Appl. Sury. Sci.169, 476 (2001).
- P. Taneja, P. Vasa, P.Ayyub, Matter. Lett. 54, 343 (2002).
- S. Bhaushan, S. K. Sharma, J. phys. 23, (1990) 909.
- M. C. Baykul, A. Balcioglu, Microelectron. Eng. 51, 703 (2000).
- M. Tsuji, T. Aramoto, H. Ohyama, T. Hibino, K. Omura, J. Cryst. Growth. 214, 1142 (2000).
- S. Yoshihiko, O. Takashi, J. Vac. Soc. Jpn. 43, 284 (2000).
- J. Nishino, S. Chatani, Y. Uotani, Y. Nosaka, J. Electronal. Chem. 473, 217 (1999).
- R. Padmavathy et al. Mater. Lett. 53, 321 (2002).
- Adawiya J. Haider, Ali M. Mousa, and Selma M.H. Al-Jawad, Journal of semiconductor technology and science, 8 4 (2008).
- U.Pal, Silva Gonzalez, G.Martinez Montes, J. M.Gracia imenez, M. A. Vidal and Sh.Torres,Thin Solid Films 305, 345 (1997).
- A. Meysam Karimi. et al, Applied Physics 9, (2009) 1236.
- Utpal Madhu, Nillohit Mukherjee, Nil Ratan Bandyopadhyay ,Anup Monda, Indian Journal of pure,applied physic,45(2007) 226.
- Jun Young Choi, Kang-Jin Kim, Ji-Beom Yoo and Donghwan Kim, Solar Energy, 64(1998) 411.
- H. Metina, R. Esen, Journal of Crystal Growth 258 141 (2003).
- JCPDS International centre for Diffraction Data, USA, (1997) file no. (421411),(060314).
- B. D. Cullity, in “ Elements of X-Ray diffraction”, (Addison- Weskey Publishing Company, Inc., London, 1978).
- Ziaul Raza Khan, m. Zulfequar, Mohd. Shahid khan,Chalcogenide Letters 7(6), 431 (2010).
- H. Derin and K. Kantarl,Surf. Interface Anal. 41, 61 (2009).
- M. A. Mahdi, S. J. Kasem, J. J. Hassen, A. A. Swadi, S. K. J.A –Ani. Int. J. Nanoelectronics and Materials 2 163 (2009).
- M.A. Al-Sabayleh, Australian Journal of Basic and Applied Sciences, 3(2) 669 (2009).
- Shadia J. Ikhmayies, Riyad N. Ahmad-Bitar, American Journal of Applied Sciences 5 (9) 1141 (2008).
- R. Amutha, A. Subbarayan, and R. Sathyamoorthy, Cryst. Res. Technol. 41(12), 1174 (2006).
- G. I. Rusu, P. Prepeliþã,
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